Ta-Shun received his bachelor degree in materials science and chemistry at National Tsing Hua University in Taiwan. After his master studies at University Erlangen-Nuremberg, he joined Cynora GmbH as a Senior Process Engineer.

During his Ph.D. project, he aims to develop a MOVPE process of homoepitaxially grown ß-Ga₂O₃ for the industrial applications. He had implemented machine learning technique to accelerate the process development and had developed specific algorithm combining reflectance spectroscopy to in-situ monitor the growth process.

If you are interested in his research, please visit his research gate website or contact him on LinkedIn.

Section: Thin Oxide Films / Junior Research Group "Epitaxy of semiconducting Gallium Oxide"

ResearchGate: researchgate.net/profile/Ta-Shun-Chou
LinkedIn: linkedin.com/in/ta-shun-chou/

Arved arbeitet seit Juli 2020 als Doktorand im NEMOCRYS Projekt von der Gruppe Modellexperimente am IKZ. Schwerpunkt seiner Arbeit ist die Entwicklung und Validierung von Multiphysik-Computersimulationen für Kristallzüchtungsprozesse unter Verwendung von Open-Source Software. Bei Interesse finden Sie weitere Informationen zu seiner Forschung bei ResearchGate und auf LinkedIn.

Sektion Fundamentale Beschreibung, Nachwuchs-Forschungsgruppe "Modellexperimente"

ResearchGate: researchgate.net/profile/Arved_Enders-Seidlitz2
LinkedIn: linkedin.com/in/arved-enders-seidlitz-465830176/

Anastasiia's mission is to develop gain materials for lasers with emission wavelengths in the 1 µm and 3 µm spectral range. Both are of high interest and possess a wide range of applications in materials processing, medical treatment and environmental monitoring. In particular cubic sesquioxide crystals enabled excellent laser performance when doped with Yb³⁺ and Er³⁺. However, the growth of sesquioxides is very challenging due to their high melting temperatures of more than 2400°C.

Nach ihrem Studium der Materialwissenschaften an der Universität Ulm arbeitet Yujia im IKZ an SiGe-basiertem Material für Qubit-Bauelemente. Sie hat an isotopentechnischer Epitaxie sowie an der Charakterisierung von Heterostrukturen gearbeitet. Auf dem Weg, Si und Ge von klassische Halbleiter nach Quanteninformation zu drängen, werden die Anforderungen an die Kristallperfektion der SiGe-Heterostruktur eingeebnet – wie atomare Stufen an der Grenzfläche, lokale Relaxation, lokale Neigung in der verspannten dünnen Si-Schicht sollten reduziert werden verlängern Sie die Kohärenzzeit des begrenzten Elektronenspins so lang wie möglich. Die Entwicklung von Hochleistungs-Quantencomputern ist eine multidisziplinäre Aufgabe, einschließlich der Materialwissenschaften.

Vor Yujias Forschungsabenteuer im Bereich Halbleiter der Gruppe IV arbeitete sie auch an den III-V-Materialien AlN und GaN sowie dem II-VI-Material ZnO.

Sektion: Halbleiternanostrukturen

LinkedIn: linkedin.com/in/yujia-liu-940824/

After finishing his studies in crystalline materials at University of Freiburg, he started working at the IKZ on high purity germanium for gamma radiation detectors. HPGe is the best material due its purity and the fact that it has less electrical active defects than any other solid material. He has been working on reduction of germanium dioxide to germanium. The germanium obtained from reduction is zone refined to remove the impurities and HPGe crystals were grown using Czochralski method. Electrical resistivity, Hall effect measurements on HPGe crystals (20-300K), PTIS(7K), etch pit density analysis, and carrier lifetime measurements with MDP were performed to understand the electrical properties of HPGe. He is proud to be a member of the LEGEND collaboration.

Section: Semiconductors, Group: Cz-IV

LinkedIn: linkedin.com/in/pradeep-chandra-palleti

Gallium oxide (Ga₂O₃) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. Palvan´s scientific interest include the charge and spin transport physics of device related gallium oxide (Ga₂O₃) bulk crystals and homoepitaxial layers. To understand the electrical properties of gallium oxide crystals grown at the IKZ, he uses conductivity and Hall effect measurements (20-1100K), deep-level transient and optical  spectroscopy (20-800K) as well as for optical characterization he uses transmission / reflection spectrometers in the wavelength range from 120nm to 100um and micro-Raman spectrometer with 6 excitation wavelengths (325-785 nm).

Sektion Experimentelle Charakterisierung

LinkedIn: linkedin.com/in/palvan-seyidov-640708187

Lucas holds a double degree in Mechanical and Materials Engineering from a Franco-Brazilian cooperation program. During his master thesis, he developed a finite element model of the quench phenomenon in superconducting magnets for particle accelerators. His experience with multiphysics simulations is now in use at the IKZ for modelling Si growth via the Float Zone method. Once robust and validated models are obtained, they will be used to train Neural Networks and optimize growth parameters. Machine learning is expected to significantly help overcome current challenges in growing 8-inch Float Zone Si crystals.

Section: Fundamental Description / Numerical Simulation

LinkedIn: linkedin.com/in/lrvieira/en